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INTEGRATED CIRCUITS
DATA SHEET
CGY2105ATS High dynamic range dual LNA MMIC
Preliminary specification File under Integrated Circuits, IC17 1999 Dec 23
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
FEATURES * Dual Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) * Typical noise figure of 0.55 dB * Typical gain of 16.3 dB at 1810 MHz * Input IP3 of 13.5 dBm at 1810 MHz * Low current of 58 mA at 2.5 V for each channel * Low cost SSOP16 plastic package. APPLICATIONS * DCS1800 * PCS1900. GENERAL DESCRIPTION
CGY2105ATS
The CGY2105 is a dual Gallium Arsenide (GaAs) MMIC amplifier designed for use in very low noise figure applications, where high linearity is also required. Excellent tracking between the two amplifiers is obtained. Gain and noise figure variations with temperature are very small. The device is suitable for use in DCS1800 and PCS1900 base station applications. It also provides high gain and very low noise performance at frequencies between 1.0 and 2.5 GHz, as used in Wireless Local Area Network (WLAN) applications. A rematching of the application board might be necessary for optimum performance.
ORDERING INFORMATION TYPE NUMBER CGY2105ATS BLOCK DIAGRAM PACKAGE NAME SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 4.4 mm VERSION SOT369-1
handbook, full pagewidth
OUT2 16
VG2 13
VG1 12
OUT1
9
CGY2105ATS
1, 2, 14, 15
3
4, 5
6
7, 8, 10, 11
FCA096
VS2
IN2 n.c.
IN1
VS1
Fig.1 Block diagram.
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
PINNING SYMBOL VS2 IN2 n.c. n.c. IN1 VS1 OUT1 VG1 VG2 OUT2 PIN 1, 2, 14 and 15 3 4 5 6 7, 8, 10 and 11 9 12 13 16 DESCRIPTION amplifier 2 source amplifier 2 input not connected not connected amplifier 1 input amplifier 1 source amplifier 1 drain output amplifier 1 gate bias amplifier 2 gate bias amplifier 2 drain output
n.c. IN1 VS1 VS1 5 6 7 8
handbook, halfpage
CGY2105ATS
VS2 VS2 IN2 n.c.
1 2 3 4
16 OUT2 15 VS2 14 VS2 13 VG2
CGY2105ATS
12 VG1 11 VS1 10 VS1 9
FCA097
OUT1
Fig.2 Pin configuration.
LIMITING VALUES SYMBOL VDS VGS VDG Vsupply Vneg Tamb Tj Tstg Ptot PARAMETER drain-source voltage gate-source voltage drain-gate voltage positive supply voltage negative supply voltage ambient temperature junction temperature storage temperature total power dissipation Tamb < 85 C see Chapter "Application and test information" see Chapter "Application and test information" CONDITIONS - -3 - - -6 -40 - - - MIN. - - - - - - - - - TYP. MAX. 5 +1 7 6 - +85 150 150 430 UNIT V V V V V C C C mW
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient VALUE 138 UNIT K/W
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2105ATS
CHARACTERISTICS Tamb = 25 C; measured and guaranteed only for the application shown in Chapter "Application and test information"; unless otherwise specified. SYMBOL Supplies Isupply Ineg positive supply current (for each LNA) Vsupply = 5.0 V; Vneg = -5.0 V 42 - 58 0.3 72 0.4 mA mA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
negative supply current (for each LNA) Vsupply = 5.0 V; Vneg = -5.0 V
Amplifiers: Vsupply = 5.0 V; Vneg = -5.0 V; Z0 = 50 ; both LNAs biased; duty cycle 100% fi G G(T) NF NF(T) IP3i IP3i(T) ISOr ISOi s11 s22 input frequency gain gain variation with temperature noise figure noise figure variation with temperature input third-order intercept point input third-order intercept point variation with temperature reverse isolation isolation between inputs input reflection coefficient output reflection coefficient 50 source 50 load -40 C < Tamb < +85 C f = 0.5 MHz -40 C < Tamb < +85 C fi = 1710 MHz fi = 1710 to 1910 MHz -40 C < Tamb < +85 C 1710 16 14.8 - - - 11 - 18 21 - - - 16.9 16.3 0.45 0.55 0.25 13.5 0.45 20 23 -8.5 -22 1910 17.8 17.8 - 0.8 - - - - - - - MHz dB dB dB dB dB dBm dB dB dB dB dB
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
APPLICATION AND TEST INFORMATION
CGY2105ATS
handbook, full pagewidth
Vsupply Vneg R4 R3
R2 C2
R6
R5
R1 C1
C4 L2 C6 OUT2
TRL6
TRL5 L1
C3 C5 OUT1
16
15
14
13
12
11
10
9
CGY2105ATS
1 2 3 4, 5 n.c. TRL4 TRL2 IN2 TRL3 TRL1 IN1
FCA098
6
7
8
The demonstration board has been optimized for a centre frequency of 1.8 GHz. The MMIC s-parameters (typical values) in a range from 0.1 to 6 GHz are available on request.
Fig.3 Application diagram.
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2105ATS
handbook, full pagewidth
Vneg
OUT2
Vsupply
Vsupply
OUT1
R2 C2 C4 L2 C6 TRL6 TRL4 TRL2
R4 R6
R3 R5
R1 C1 C3 L1 C5 TRL5 TRL3 TRL1
IN2
IN1
FCA099
Designed for a centre frequency of 1.8 GHz.
Fig.4 Application PCB layout.
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
Table 1 List of components; see Figs 3 and 4 DESCRIPTION decoupling capacitor decoupling capacitor decoupling capacitor drain biasing resistor gate biasing resistor gate biasing resistor drain biasing inductor Transmission lines; see Figs 3 and 4 Z0 100 100 100 LENGTH IN 0.08 at 1800 MHz 0.08 at 1800 MHz 0.08 at 1800 MHz LENGTH IN mm(1) 10 mm 4 mm 3.4 mm 1 nF 47 pF 47 pF 39 15 k 10 k 18 nH VALUE
CGY2105ATS
COMPONENT C1, C2 C3, C4 C5, C6 R1, R2 R3, R4 R5, R6 L1, L2 Table 2
REFERENCE Philips; NPO, 0603 Philips; NPO, 0603 Philips; NPO, 0603 Philips; XR7, 0805 Philips; 0603 Philips; 0603 Coilcraft; 0603
COMPONENT TRL1, TRL2 TRL3, TRL4 TRL5, TRL6 Note
WIDTH IN mm(1) 0.25 mm 0.80 mm 0.80 mm
1. Transmission line lengths and widths in mm are valid for a double sided PCB; thickness of 0.8 mm in FR4 material ( = 4.7).
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
Measured performance
CGY2105ATS
handbook, halfpage
20.0
FCA100
G (dB) 16.0
handbook, halfpage
2.00
FCA101
NF (dB) 1.60
12.0
1.20
8.0
0.80
4.0
0.40
0.0 1.50
1.60
1.70
1.80
1.90 2.00 f (GHz)
0.00 1.50
1.60
1.70
1.80
1.90 2.00 f (GHz)
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.5 Gain as a function of the frequency.
Fig.6 Noise figure as a function of the frequency.
handbook, halfpage
0.0
FCA102
handbook, halfpage
20.0
FCA103
s11 (dB) -2.5
s21 (dB)
16.0
12.0 -5.0 8.0 -7.5 4.0
-10.0 1.00
1.50
2.00
f (GHz)
2.50
0.0 1.00
1.50
2.00
f (GHz)
2.50
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.7
Input reflection coefficient s11 as a function of the frequency.
Fig.8
Forward transmission coefficient s21 as a function of the frequency.
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2105ATS
handbook, halfpage
0.0
FCA104
s12
handbook, halfpage
0.0
FCA105
(dB) -5.0
s22 (dB)
-5.0
-10.0
-10.0
-15.0
-15.0
-20.0
-20.0
-25.0 1.00
1.50
2.00
f (GHz)
2.50
-25.0 1.00
1.50
2.00
f (GHz)
2.50
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.9
Reverse transmission coefficient s12 as a function of the frequency.
Fig.10 Output reflection coefficient s22 as a function of the frequency.
handbook, halfpage
0.0
FCA106
handbook, halfpage
20.0
FCA107
ISOi (dB) -10.0
Po (dBm) 10.0
-20.0
0.0
-30.0 1.00
1.50
2.00
f (GHz)
2.50
-10.0 -20.0
-10.0
0.0
Pi (dBm)
10.0
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.11 Isolation between RF inputs as a function of the frequency.
Fig.12 RF output power as a function of the RF input power.
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
PACKAGE OUTLINE SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
CGY2105ATS
SOT369-1
D
E
A X
c y HE vM A
Z
16
9
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
8
wM detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0.00 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.25 0.13 D (1) 5.30 5.10 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT369-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 94-04-20 95-02-04
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. Manual soldering
CGY2105ATS
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
Suitability of surface mount IC packages for wave and reflow soldering methods
CGY2105ATS
SOLDERING METHOD PACKAGE WAVE BGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
NOTES
CGY2105ATS
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
NOTES
CGY2105ATS
1999 Dec 23
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Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
NOTES
CGY2105ATS
1999 Dec 23
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465008/01/pp16
Date of release: 1999
Dec 23
Document order number:
9397 750 06527

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